| PART |
Description |
Maker |
| BUK9635-55 BUK9635-56 |
TrenchMOSTM）transistor Logic level FET(TrenchMOSTM）晶体管逻辑电平FET)
TrenchMOS transistor Logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BUK9E06-55B BUK9506-55B BUK9606-55B |
N-channel TrenchMOSTM logic level FET N沟道场效应晶体管逻辑电平TrenchMOSTM
N-channel TrenchMOS(tm) logic level FET
|
Electronic Theatre Controls, Inc.
ETC[ETC]
PHILIPS
List of Unclassifed Manufacturers
|
| KUK7607-55B |
TrenchMOSTM standard level FET
|
Guangdong Kexin Industrial Co.,Ltd
|
| BUK9515 BUK9515-55 |
TrenchMOS transistor Logic level FET
TrenchMOS（TM）transistor Logic level FET(TrenchMOS（TM）晶体管逻辑电平FET)
TrenchMOSTM）transistor Logic level FET(TrenchMOSTM）晶体管逻辑电平FET)
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| FW905 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
7 A, 20 V, 0.024 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Sanyo Semicon Device
SANYO SEMICONDUCTOR CO LTD
|
| SUP65P06-20 SUB65P06-20 |
From old datasheet system
P-Channel Enhancement-Mode Trans
P-Channel 60-V (D-S), 175C MOSFET
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,65A I(D),TO-220AB
P-Channel MOSFET
30V N-Channel PowerTrench MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology Inc
Vishay Intertechnology,Inc.
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
| SLA5018 |
N-channel P-channel H-bridge 5 A, 60 V, 0.3 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Sanken Electric Co., Ltd.
SANKEN[Sanken electric]
|
| HI-506A07 HI3-0508A-5Z |
16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel, CMOS Analog MUXs with Active Overvoltage Protection
|
Intersil Corporation
|
| FDS8926A |
Dual N-Channel Enhancement Mode Field Effect Transistor 5.5 A, 30 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| PHN210T |
Dual N-channel TrenchMOS intermediate level FET 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
NXP Semiconductors N.V.
|
